Integration of self-assembled vertically aligned nanocomposite (La0.7Sr0.3MnO3)(1-x):(ZnO)x thin films on silicon substrates.
作者： Wenrui Zhang , Aiping Chen , Fauzia Khatkhatay , Chen-Fong Tsai , Qing Su
DOI: 10.1021/AM400068H
关键词:
摘要: Epitaxial (La0.7Sr0.3MnO3)1–x:(ZnO)x (LSMO:ZnO) in vertically aligned nanocomposite (VAN) form was integrated on STO/TiN-buffered silicon substrates by pulsed-laser deposition. Their magnetotransport properties have been investigated and are systematically tuned through controlling the ZnO concentration. The composite film with 70% molar ratio exhibits a maximum magnetoresistance (MR) value of 55% at 70 K 1 T. enhanced tunable low-field MR attributed to structural magnetic disorders spin-polarized tunneling secondary phase. integration LSMO:ZnO VAN films is critical step enabling application future spintronic devices.
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