Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films
作者： D. Nesheva , C. Raptis , A. Perakis , I. Bineva , Z. Aneva
DOI: 10.1063/1.1504176
关键词:
摘要: Silicon-rich silicon oxide thin films have been prepared by thermal evaporation of monoxide in vacuum. The SiOx film composition (1.1⩽ x ⩽1.7) has controlled varying the deposition rate and residual pressure chamber. Long time stability all ensured a postdeposition annealing at 523 K for 30 min Ar atmosphere. Some were further annealed 973 some others 1303 K. Raman scattering measurements implied formation amorphous nanoparticles Si nanocrystals latter conclusion is strongly supported high resolution electron microscopy studies which show density these films. Photoluminescence observed from both crystalline interpreted terms band-to-band recombination having average size greater than 2.5 nm carrier through defect states smaller nanoparticles.
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