作者: Talia S. Gershon , Ajaya K. Sigdel , Andrew T. Marin , Maikel F.A.M. van Hest , David S. Ginley
DOI: 10.1016/J.TSF.2013.03.041
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摘要: Abstract The influence of semiconductor layer morphology on the performance solution-processed ZnO/Cu2O photovoltaics has been examined. ZnO films were prepared using three highly scalable, cost-effective methods: electrodeposition, zinc acetate decomposition, and diethyl decomposition. To optimize device performance, it is found that a low density nano-scale pores in large grains Cu2O necessary. Through optimizing morphology, one highest fill factors observed to date (up 54%) was achieved. This value comparable with factor record-efficiency device, which much larger energy inputs.