First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit
作者： Yongsoo Ahn , Mincheol Shin
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摘要: We investigate the ballistic performance of monolayer indium selenide (InSe) n-type FETs, benchmarking with WS2, WSe2, and black phosphorus FETs. utilize first-principles-based quantum transport simulations employing density functional theory nonequilibrium Green’s function. The transfer characteristics, subthreshold swing, drain-induced barrier lowering InSe FETs are assessed compared those benchmarks. Our comparison to benchmark transistors reveals that competitive in ON-state performance, but short-channel effects ultrascaled need be suppressed. favorable for high-performance applications rather than low power ones.
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sci-hub.se 参考文章(52)
Non-tetrahedrally bonded elements and binary compounds I Springer. ,(1998) , 10.1007/B71138
Varun Mishra, Samuel Smith, Lei Liu, Ferdows Zahid, Yu Zhu, Hong Guo, Sayeef Salahuddin, Screening in Ultrashort (5 nm) Channel MoS 2 Transistors: A Full-Band Quantum Transport Study IEEE Transactions on Electron Devices. ,vol. 62, pp. 2457- 2463 ,(2015) , 10.1109/TED.2015.2444353
Leonard F. Register, Sanjay K. Banerjee, Jiwon Chang, Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs arXiv: Mesoscale and Nanoscale Physics. ,(2014) , 10.1063/1.4866872
Han Liu, Peide D. Ye, MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric arXiv: Materials Science. ,(2011) , 10.1109/LED.2012.2184520
Fengnian Xia, Han Wang, Yichen Jia, Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics Nature Communications. ,vol. 5, pp. 4458- ,(2014) , 10.1038/NCOMMS5458
Amretashis Sengupta, Santanu Mahapatra, Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon MOSFET arXiv: Mesoscale and Nanoscale Physics. ,(2013) , 10.1063/1.4833554
Wei Cao, Jiahao Kang, Deblina Sarkar, Wei Liu, Kaustav Banerjee, 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI IEEE Transactions on Electron Devices. ,vol. 62, pp. 3459- 3469 ,(2015) , 10.1109/TED.2015.2443039
Serge Luryi, Quantum capacitance devices Applied Physics Letters. ,vol. 52, pp. 501- 503 ,(1988) , 10.1063/1.99649
Z. Y. Zhu, Y. C. Cheng, U. Schwingenschlögl, Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors Physical Review B. ,vol. 84, pp. 153402- ,(2011) , 10.1103/PHYSREVB.84.153402
Xi Cao, Jing Guo, Simulation of Phosphorene Field-Effect Transistor at the Scaling Limit IEEE Transactions on Electron Devices. ,vol. 62, pp. 659- 665 ,(2015) , 10.1109/TED.2014.2377632