Screening in Ultrashort (5 nm) Channel MoS 2 Transistors: A Full-Band Quantum Transport Study
作者： Varun Mishra , Samuel Smith , Lei Liu , Ferdows Zahid , Yu Zhu
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摘要: Full-band ballistic quantum transport calculations were used to study the screening effects in ultrashort-channel few-layer MoS2 transistors. A large density of states resulted small lengths while inhibiting direct source-to-drain tunneling. Short-channel observed even for structurally confined 2-D transistors resulting degraded electrostatic control. Electron confinement also OFF-state multilayered devices.
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