作者: T. T. Dao , T. V. Tran , K. Higashimine , H. Okada , D. Mott
DOI: 10.1109/IMFEDK.2012.6218570
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摘要: In this paper, an organic nonvolatile resistor memory was made from ZnO nanoparticles dispersed in polymethylmethacrylate. The device exhibited a highly reliable characteristic with retention time greater than 105 s. effect originated conductive filament (CF) formation. formation process of the CFs observed by measuring emission under bias. were further visualized through analyses cross-sectional high-resolution transmission electron microscopy image and energy dispersive x-ray spectroscopy elemental mapping.