Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation.
作者： Hyungtak Kim , Kwangeun Kim , Van Cuong Nguyen
DOI: 10.3390/MI12040400
关键词:
摘要: We investigated the sensing characteristics of NO2 gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at temperatures. In this paper, we demonstrated optimization performance by gate bias, which exhibited advantage FET-type compared to diode-type ones. When sensor was biased near threshold voltage, density in channel showed a relatively larger change with response exposure and significant improvement sensitivity. At 300 °C under 100 ppm concentration, sensor’s sensitivities were 26.7% 91.6%, while times 32 9 s VG = 0 V −1 V, respectively. The stable repeatability regardless voltage temperature.
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