Dephasing time of GaAs electron-spin qubits coupled to a nuclear bath exceeding 200 μs
作者： Hendrik Bluhm , Sandra Foletti , Izhar Neder , Mark Rudner , Diana Mahalu
DOI: 10.1038/NPHYS1856
关键词:
摘要: Electron spins in semiconductor structures are quantum bits with good prospects, but the information stored spin states tends to degrade quickly owing interactions nuclei host material. A study of GaAs dots now provides a fuller understanding this memory loss and how it can be suppressed. Quantum-memory times exceeding 200 μs demonstrated, two orders magnitude longer than previously reported for system.
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