AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage
作者： Shiyu Xie , Chee Hing Tan
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摘要: The temperature dependence of dark current and avalanche gain were measured on AlAsSb p-i-n diodes with region widths 80 230 nm. Measurements at temperatures ranging from 77 to 295 K showed that the decreases rapidly reducing while exhibits a weak dependence. No measurable band tunneling was observed in thinner an electric field 1.07 MV/cm, corresponding bias 95% breakdown voltage. Temperature coefficients voltage 0.95 1.47 mV/K obtained nm diodes, respectively. These are significantly lower than range semiconductor materials similar widths. Our results demonstrated potential using thin regions achieve low coefficient without suffering high current.
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