Electric circuit suitable for direct connection to high voltage

摘要: The circuit (12) has a substrate (32) comprising an insulation material with two conducting layers (34, 36), which are adapted to receive potential difference of about 50 KV. One the is connected integrated (14). insulating comprises 25-70% boron nitride in cubic form, 25-75% aluminum and 0-50% sintering elements, by weight. made that 35% 65% nitride, elements consist yttrium oxide, oxide or calcium oxide. MOSFET. Independent claims also included for following: (1) electric device directly overhead line (2) method manufacturing circuit.