Semiconductor device with a stoichiometric gradient
作者： Rajesh Sathiyanarayanan , Geoffrey W. Burr , Kota V. R. M. Murali , Rajan K. Pandey , Mohit Bajaj
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摘要: A device that includes a semiconductor and contact electrode with first side is opposite second side. The abuts the device. has stoichiometry varies from to of inhibits diffusion metal into electrode.
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