Silicon-on-porous-silicon; method of production and material

摘要: The invention provides a method of producing silicon-on-porous-silicon material comprising the steps (i) manufacturing porous silicon layer on suitable wafer, such that wafer has surface and non-porous surface, (ii) applying an implanted ion dose to at least portion is sufficient cause amorphization silicon. produced by can then be used for production silicon-on-insulator oxidation remaining recrystallization amorphised Typically manufacture e.g. SOI C-MOS devices bipolar transistors. Alternatively, pyroelectric devices.