Damage of low-energy ion irradiation on copper nanowire: molecular dynamics simulation

摘要: Physical and chemical phenomena of low-energy ion irradiation on solid surfaces have been studied systematically for many years, due to the wide applications in surface modification, implantation thin-film growth. Recently bombardment nano-scale materials with ions gained much attention. Comared bulk materials, show different physical properties. In this article, we employed molecular dynamics simulations study damage caused by copper nanowires. By simulating 5 incident energies, namely, 1 keV, 2 3 4 keV found that sputtering yield is linearly proportional energies ions. Low-energy impacts mainly induce nanowires, only a few defects were observed. Surface vacancies adatoms accumulated form defect clusters surface, their distribution are related type crystal plane, e.g. prefer stay (100) while (110) plane. These results reveal size effect will influence interaction between nanowire.