XPS study of impurities in Si‐doped AlN film
作者： W. Liu , X.G. He , X. J. Li , X Li , S. T Liu
DOI: 10.1002/SIA.6037
关键词:
摘要: This paper reports an XPS study of impurities in a 100-nm-thick AlN film grown by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type 6H-SiC substrate. The Si-doped was characterized X-ray photoelectron spectroscopy (XPS) high vacuum system, which reveals content distribution and states along depth. analysis before after argon-ion etching indicates that there always exist Ga, O C contaminations film. Especially, contamination surface is mostly introduced during growth layer MOCVD. Meanwhile, most atoms bind with Al or Ga Al―O Ga―O states. In particular, are two states, i.e. Ga―Ga bond bond, demonstrates aggregation accompanying growth. Copyright © 2016 John Wiley & Sons, Ltd.
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