作者: J. D. Baniecki , R. B. Laibowitz , T. M. Shaw , C. Parks , J. Lian
DOI: 10.1063/1.1339207
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摘要: The leakage current density–applied field (J−EA) characteristics of (BaxSr1−x)Ti1+yO3+z (BSTO) thin film capacitors with Pt electrodes that have been annealed in forming gas (95% Ar 5% H2 or D2) were investigated over the temperature range from −60 to +60 °C. Forming annealing significantly increased density. J–EA exhibited features could not be fully explained by either a simple thermionic emission tunneling (Fowler–Nordeim) formalism. Using general charge transport theory Murphy and Good, we show can successfully interpreted terms electrons through interfacial Schottky barrier peak energy distribution incident carriers strongly dependent on applied field. At high fields is peaked near Fermi level electron injecting metal electrode at all temperatures considered this study, leading almost ind...