Dielectric and Ferroelectric Behaviors of (100)-Oriented 0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3Thin Films
作者： Xuedong Li , Hong Liu , Jiagang Wu , Dingquan Xiao , Jianguo Zhu
DOI: 10.1080/00150193.2015.1011571
关键词:
摘要: 0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3 (PSTT10) thin films were deposited on Si(1 0 0) substrate with a LaNiO3 buffer layer by RF magnetron sputtering technique and post annealed two-steps rapid thermal annealing method. Dielectric, ferroelectric behaviors surface morphology of the analyzed. The show good dielectric properties which is similar to PSTT5 films. leakage current behavior according Ohm law in low electric field region, while it satisfies space-charge limited conduction medium region. With increasing frequency, constant decrease loss increase, shows typical relaxor behavior. frequency band can be explained as Rayleigh law. exhibits crack free uniform surface, roughness about 17 nm.
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