Three dimensional NAND memory device with drain select gate electrode shared between multiple strings
作者： Diep Vinh , Chin Henry , Chen Changyuan , Lu Ching Huang
DOI:
关键词:
摘要: Systems, methods, and devices of the various embodiments provide both “string-sharing” drain select gate electrodes “string-selective” in vertical NAND strings. Various may two or more strings sharing a common electrode while also having separate additional not electrically connected across
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