3-dimensional non-volatile memory device and method of manufacturing the same
作者： Eun Seok Choi
DOI:
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摘要: A non-volatile memory device comprising a plurality of strings each including drain select transistor, drain-side cells, pipe source-side and source transistor coupled in series, wherein the are arranged first direction second direction, form string columns; bit lines extended to transistors included column; common adjacent other one columns staggered at least two lines.
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