Patient dose measurements in photon fields by means of silicon semiconductor detectors

摘要: Semiconductor detectors based on p-type silicon and designed for in vivo measurement of entrance dose at the reference point from photon radiation fields, are described. To estimate absorbed measurements with a thin detector, field-size dependent correction factors must be applied to reading, as shape buildup curve varies field size. decrease or avoid factors, detector can covered cap. The presence such will cause perturbation field. Therefore, design irrespective its type, intended patient dosimetry involves compromise between minimizing factors. Detectors three different caps were cover energy range cobalt-60 16-MV x rays. types investigated respect their signal dependence size, perturbation, directional dependence. A summary damage effects sensitivity, sensitivity variation temperature is also presented.