Wire-channel and wrap-around-gate metal–oxide–semiconductor field-effect transistors with a significant reduction of short channel effects

摘要: Metal–oxide–semiconductor field-effect transistors (MOSFETs) with a wire-channel and wrap-around-gate (WW) structure were fabricated using electron beam lithography reactive ion etching. The smallest devices have 35 nm channel width, 50 thickness, 70 length. Measurements showed that as the width of WW MOSFETs decreased from 75 to short effects significantly reduced: subthreshold slope 356 80 mV/dec drain-induced barrier lowering 988 129 mV. Furthermore, reduction increases drive current per unit width. A multichannel MOSFET high driving capability is discussed.