Metal patterning with adhesive hardmask layer

摘要: An adherent hardmask structure and method of etching a bottom electrode in memory device capacitor structures that dispenses with the need for any adhesion promoter during electrode. By using silicon nitride as 220, processing is simplified more robust can be produced. Silicon 220 has been shown to yield significantly enhanced platinum 210, compared oxide formed by method. Since oxidation resistant, it advantageously resists oxygen plasma might used etch chemistry. This process high-k DRAMs ≧256 Mbit generations.