Apparatus for producing a silicon carbide single crystal comprises a double-walled crucible and an inductive heater

摘要: Apparatus to produce a silicon carbide single crystal (32) comprises: double-walled crucible (10) having homogenizing zone (19) arranged between the inner wall (14) and outer (15), (11) within wall, supply region (12) of carbide, (13) receive seed (31) on which grows; an inductive heater (16) surrounding inductively coupled wall. Preferred Features: Thermal insulation, preferably graphite foam, is provided heater. The predominantly made graphite. has coating Ta, W, Nb, Mo, Re, Ir, Ru, Hf or Zr.