Sublimation growth of silicon carbide single crystals
作者： Charles Eric Hunter , Robert F. Davis , Calvin H. Carter
DOI:
关键词: Materials science 、 Crystallography 、 Seed crystal 、 Silicon carbide 、 Temperature gradient 、 Sublimation (phase transition) 、 Chemical engineering
摘要: The present invention is a method of forming large device quality single crystals silicon carbide (33). sublimation process enhanced by maintaining constant polytype composition in the source materials (40), selected size distribution specific preparation growth surface seed (32), and controlling thermal gradient between (40) crystal (32).
lens.org 参考文章(19)
Robert L Williams, Distillation mechanism and system ,(1973)
P. Krishna, Crystal growth and characterization of polytype structures Pergamon. ,(1983)
C. H. L. Goodman, Crystal growth : theory and techniques Springer Science+Business Media. ,(1974)
Naresh K. Rohatgi, George C. Hsu, Deposition method for producing silicon carbide high-temperature semiconductors ,(1986)
F. Rosenberger, G.H. Westphal, Low-stress physical vapor growth (PVT) Journal of Crystal Growth. ,vol. 43, pp. 148- 152 ,(1978) , 10.1016/0022-0248(78)90162-8
Yu.M. Tairov, V.F. Tsvetkov, General principles of growing large-size single crystals of various silicon carbide polytypes Journal of Crystal Growth. ,vol. 52, pp. 146- 150 ,(1981) , 10.1016/0022-0248(81)90184-6
Arrigo Addamiano, Method of preparing single crystalline cubic silicon carbide layers Patent Department of the Navy. ,(1984)
Lely Jan Anthony, Sublimation process for manufacturing silicon carbide crystals ,(1955)
Frederick G. Stroke, Roger A. Steiger, Porous refractory metal boride article having dense matrix ,(1976)
Gerrit Verspui, Wilhelmus Franciscus Knippenberg, Method of manufacturing silicon carbide crystals ,(1972)