Anomalous Impurity Diffusion in III–V Compounds: The Consequence of Self‐Induced Field Effects

作者: O. Hildebrand

DOI: 10.1002/PSSA.2210720219

关键词:

摘要: Self-consistent model calculations are presented of the diffusion ionized impurities with two different charge states, including self-generated electric field. Depending on states and background doping, strong deviations from complementary error function can occur without any local nonequilibrium effects: very flat, steep, concave compensated regions in profile as well “uphill” be explained a consequence self-induced field effects. Es werden selbstkonsistente Modellrechnungen der Diffusion ionisierter Storstellen mit zwei moglichen Ladungszustanden und unter Berucksichtigung des selbstinduzierten elektrischen Feldes durchgefuhrt. Je nach Ladungszustand Untergrunddotierung konnen starke Abweichungen von komplementaren Fehlerfunktion auftreten, ohne das lokale Nichtgleichgewichtseffekte angenommen mussen: Sehr flache, sehr steile kompensierte Bereiche sowie Linkskrummungen im Diffusionsprofil ebenso wie „Bergauf”-Diffusion als Folge selbstinduzierter Feldeffekte verstanden werden.

参考文章(28)
L. L. Chang, G. L. Pearson, Diffusion and Solubility of Zinc in Gallium Phosphide Single Crystals Journal of Applied Physics. ,vol. 35, pp. 374- 378 ,(1964) , 10.1063/1.1713321
H.K. Gummel, A self-consistent iterative scheme for one-dimensional steady state transistor calculations IEEE Transactions on Electron Devices. ,vol. 11, pp. 455- 465 ,(1964) , 10.1109/T-ED.1964.15364
G.W. Brown, B.W. Lindsay, The numerical solution of poisson's equation for two-dimensional semiconductor devices Solid-state Electronics. ,vol. 19, pp. 991- 992 ,(1976) , 10.1016/0038-1101(76)90177-5
Ritu Shrivastava, Alan H. Marshak, Charge neutrality and the internal electric field produced by impurity diffusion Solid-State Electronics. ,vol. 23, pp. 73- 74 ,(1980) , 10.1016/0038-1101(80)90170-7
L.L. Chang, H.C. Casey, Diffusion and solubility of zinc in indium phosphide Solid-State Electronics. ,vol. 7, pp. 481- 485 ,(1964) , 10.1016/0038-1101(64)90046-2
Ronald Q. Perritt, Alan H. Marshak, A numerical study of field-aided diffusion Solid-State Electronics. ,vol. 17, pp. 257- 265 ,(1974) , 10.1016/0038-1101(74)90014-8
B. V. Dutt, A. K. Chin, W. A. Bonner, Diffusion of Cd into InP at 680°C Journal of The Electrochemical Society. ,vol. 128, pp. 2014- 2019 ,(1981) , 10.1149/1.2127786
L. L. Chang, G. L. Pearson, Diffusion Mechanism of Zn in GaAs and GaP Based on Isoconcentration Diffusion Experiments Journal of Applied Physics. ,vol. 35, pp. 1960- 1965 ,(1964) , 10.1063/1.1713779
Leonard R. Weisberg, Joseph Blanc, Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAs Physical Review. ,vol. 131, pp. 1548- 1552 ,(1963) , 10.1103/PHYSREV.131.1548