作者: R. Bruchhaus , D. Pitzer , R. Primig , M. Schreiter , W. Wersing
DOI: 10.1080/10584589708013011
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摘要: Abstract A planar multi target sputtering approach was used to deposit PbTiO3 (PT) and Pb(Zr, Ti)O3 (PZT) films on TiO2/Pt bottom electrodes for the use in thin film pyroelectric IR detector arrays. PZT with a Zr content of 28 at% (PZ28T) exhibited best coefficient typically 2×10−4 Cm−2K−1. The PZ28T have been fabricating two dimensional 11×6 pixel array Si wafers. pixels sensitive area 280 ×280 μm2 noise lequivalent power NEP less than 0.7 nW at 1 Hz. It is planned systems motion detection.