作者: A. Roelofs , K. Szot , R. Waser
DOI: 10.1007/978-1-4419-9044-0_6
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摘要: Piezoresponse force microscope (PFM) is applied in order to study the in- plane and out-of-plane domain configuration ferroelectric thin films. By applying a voltage pulse conducting cantilever contact with sample surface, 180° polarization switching induced. The investigated films were polycrystalline PbTiO3 on platinized silicon wafers single crystal Pb(Zr0.2Ti0.8)O3 La0.5Sr0.5 CoO3 (LSCO) using SrTiO3 wafers. It found for crystalline that (i.e. c-domains) as grown after annealing always pointing downwards. This self-poling (or self- polarization) can be explained by concentration gradient film, an effect of chemical segregation annealing. leads electric field, which present during cooling film under phase transition temperature, making downwards more favorable than upwards c-domains. A model self bulk crystals perovskite structure basis XPS, SIMS, X-Ray, AFM data proposed.