Carrier Transportation Mechanism of the $\hbox{TaN}/ \hbox{HfO}_{2}/\hbox{IL}/\hbox{Si}$ Structure With Silicon Surface Fluorine Implantation
作者： Woei Cherng Wu , Chao-Sung Lai , Tzu-Ming Wang , Jer-Chyi Wang , Chih Wei Hsu
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摘要: In this paper, the current transportation mechanism of HfO2 gate dielectrics with a TaN metal and silicon surface fluorine implantation is investigated. Based on experimental results temperature dependence leakage Fowler-Nordheim tunneling characteristics at 77 K, we have extracted transport mechanisms energy band diagrams for TaN/HfO2/IL/Si structures incorporation, respectively. particular, obtained following physical quantities: 1) fluorinated as-deposited interfacial layer (IL)/Si barrier heights (or conduction offsets) 3.2 2.7 eV; 2) TaN/fluorinated 2.6 1.9 3) effective trapping levels 1.25 eV (under both substrate injections) below HfOF 1.04 injection) 1.11 band, which contributes to Frenkel-Poole conduction.
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