Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations
作者： Eun-Ae Choi , K. J. Chang
DOI: 10.1063/1.3106643
关键词: Metastability 、 Quasiparticle 、 Electron 、 Threshold voltage 、 Trapping 、 Instability 、 Condensed matter physics 、 Hafnium 、 Fermi level 、 Atomic physics 、 Materials science
摘要: We perform quasiparticle energy calculations to study the charge-transition levels of oxygen vacancy (VO) in HfO2. The negative-U property VO can explain flat band voltage shifts and threshold (Vth) instability hafnium based devices. In p+ Si gate electrode, Fermi level pinning varies by up 0.55 eV, good agreement with measured values. Depending on bias, traps electrons or holes from channel, causing Vth instability. It is suggested that short time-scale charge trapping/detrapping due metastable VO−1 centers, whereas stable VO−2 centers dominate long
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