CMOS transistor mismatch model valid from weak to strong inversion
作者： T. Serrano-Gotarredona , B. Linares-Barranco
DOI: 10.1109/ESSCIRC.2003.1257213
关键词:
摘要: A five parameter mismatch model continuous from weak to strong inversion is presented. The an extension of a previously reported one valid in the region [1]. characterization NMOS and PMOS transistors for 30 different geometries has been done with this model. able predict current mean relative error 13.5% 5% inversion. This verified 12 curves, sweeping V/sub G/, DS/,V/sub S/.
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