An easy-to-use mismatch model for the MOS transistor
作者： J.A. Croon , M. Rosmeulen , S. Decoutere , W. Sansen , H.E. Maes
关键词:
摘要: In this paper, a physics-based mismatch model is presented. It demonstrated on 0.18-/spl mu/m technology that simple can still be used to characterize deep-submicron technologies. The accuracy of the examined and found within 20% in strong inversion region. Bulk bias dependence modeled physical way. To extract parameters, weighted fit introduced. shown width length parameters given by Pelgrom model.
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