Capacitance variation detection circuit and semiconductor device

摘要: PROBLEM TO BE SOLVED: To reduce the number of bonding wires necessary for between two semiconductor chips in a hybrid IC comprising chip where capacitance type sensor is formed and detection circuit detecting its variation formed. SOLUTION: A reverse side 50 connected to an electrode on surface support board which mounted one terminal Ncb capacitor Cm set reference potential. On 50, pad another Ncd 52, become connection Nd with Cm, bias 54 outputs voltage charging 56 via Cc detects potential as electric signal are Both 52 by wire Ncd. COPYRIGHT: (C)2008,JPO&INPIT