Novel simple and complementary metal-oxide-semiconductor-compatible membrane release design and process for thermal sensors

摘要: A novel approach to the design and fabrication of released membrane thermal sensors has been developed. Its advantages are facilitate processing over suspended membranes after their liberation, allow 1 μm 100’s deep cavities under membrane. It consists in sacrificial etching a layer up an open silicon area hidden membrane, followed by front-side bulk micromachining depth desired. This is compatible complementary metal-oxide-semiconductor commercial fabrication, only needs one protective coarse lithography step few without alignment. may be used low temperature heated gas pressure sensors, as general, since isolation optimized high values.