Porous silicon preparation: Alchemy or electrochemistry?
作者： Volker Lehmann
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sci-hub.se 参考文章(17)
H. F�ll, Properties of silicon-electrolyte junctions and their application to silicon characterization Applied Physics A. ,vol. 53, pp. 8- 19 ,(1991) , 10.1007/BF00323428
L. T. Canham, M. R. Houlton, W. Y. Leong, C. Pickering, J. M. Keen, Atmospheric impregnation of porous silicon at room temperature Journal of Applied Physics. ,vol. 70, pp. 422- 431 ,(1991) , 10.1063/1.350293
H. J. Hoffmann, J. M. Woodall, Photo-enhanced etching of n-Si Applied Physics A. ,vol. 33, pp. 243- 245 ,(1984) , 10.1007/BF00614665
S. M. Hu, D. R. Kerr, Observation of Etching of n‐Type Silicon in Aqueous HF Solutions Journal of The Electrochemical Society. ,vol. 114, pp. 414- 414 ,(1967) , 10.1149/1.2426612
M. J. J. Theunissen, Etch Channel Formation during Anodic Dissolution of N‐Type Silicon in Aqueous Hydrofluoric Acid Journal of The Electrochemical Society. ,vol. 119, pp. 351- 360 ,(1972) , 10.1149/1.2404201
V. Lehmann, H. Föll, Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon Journal of The Electrochemical Society. ,vol. 137, pp. 653- 659 ,(1990) , 10.1149/1.2086525
R. Herino, G. Bomchil, K. Barla, C. Bertrand, J. L. Ginoux, Porosity and Pore Size Distributions of Porous Silicon Layers Journal of The Electrochemical Society. ,vol. 134, pp. 1994- 2000 ,(1987) , 10.1149/1.2100805
K.H. Beckmann, Investigation of the chemical properties of stain films on silicon by means of infrared spectroscopy Surface Science. ,vol. 3, pp. 314- 332 ,(1965) , 10.1016/0039-6028(65)90002-6
C. P. Wu, E. C. Douglas, C. W. Mueller, R. Williams, Techniques for Lapping and Staining Ion‐Implanted Layers Journal of The Electrochemical Society. ,vol. 126, pp. 1982- 1988 ,(1979) , 10.1149/1.2128839
Vincent V. Doan, Michael J. Sailor, Photolithographic fabrication of micron‐dimension porous Si structures exhibiting visible luminescence Applied Physics Letters. ,vol. 60, pp. 619- 620 ,(1992) , 10.1063/1.106572