Orientation Effect of the Wafer on the Structural Properties of P+ Type Porous Silicon Layers
作者： C Faivre , D Bellet , None
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摘要: The structural properties of (111) oriented p+ type Porous Silicon (PS) samples are investigated using various X-ray diffraction techniques and compared to (001) PS layer structure. High resolution diffractometry was used record rocking curves reciprocal space maps, giving indications about the crystalline quality as well pore orientation. reflectivity performed on thin layers allow estimate thickness, porosity roughness PS/substrate interface.
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