Chemically Deposited Sb2 S 3 and Sb2 S 3 ‐ CuS Thin Films

作者: MTS Nair , Y Pena , J Campos , VM Garcia , PK Nair

DOI: 10.1149/1.1838605

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摘要: Thin films of antimony sulfide have been deposited from chemical baths containing trichloride and sodium thiosulfate maintained at 10 C. Upon annealing in nitrogen 300 C for 1 h, the become photosensitive with photo- to dark-current ratio two three orders magnitude 2 kW/m{sup 2} tungsten halogen radiation. The annealed are crystalline an X-ray diffraction pattern matching that stibnite, Sb{sub 2}S{sub 3}, (JCPDS 6-0474) show optical bandgap 1.78 eV. Deposition a thin film CuS on subsequent 250 h produces acceptable solar control characteristics: integrated visible transmittance, T{sub vis}, 15%; reflectance, R{sub 12%; infrared ir}, 14%; 36%; shading coefficient about 0.35. patterns 3}-CuS indicate formation ternary compound structure famatinite, Cu{sub 3}SbS{sub 4}.

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