Uniformity of epitaxial nanostructures of CoSi2 via defect control of the Si (111) surface

摘要: Abstract The morphology and the size distribution of self-organized cobalt silicide nanostructures, grown on Si (111) substrates with controlled defects, have been investigated. An initial defect structure surface is produced by quenching substrate from just below 7 × 7 ⇌ ‘1 × 1’ (disordered) phase transition temperature. This has predominantly (111)-(7 × 7) reconstructed along some disordered regions lines surface. contain randomly placed adatom ring clusters or a lattice gas small patches √7 × √7 R 19° structure. These preannealed for different durations before 0.5 monolayer Co deposition them forming CoSi 2 reactive epitaxy. With increasing duration annealing consequent reduction density roughness, change island morphology, bimodal to monomodal an increase average observed. Reduction defects via preannealing appears lead growth homogeneous nanostructures.