Electronic Structures of Graphene Layers on Metal Foil: Effect of Point Defects

摘要: Here we report a facile method to generate high density of point defects in graphene on metal foil and show how the affect electronic structures layers. Our scanning tunneling microscopy (STM) measurements, complemented by first principle calculations, reveal that result both intervalley intravalley scattering graphene. The Fermi velocity is reduced vicinity area defect due enhanced scattering. Additionally, our analysis further points out periodic can tailor properties introducing significant bandgap, which opens an avenue towards all-graphene electronics.