Polarity asymmetry of oxides grown on polycrystalline silicon
作者： J.C. Lee , C. Hu
DOI: 10.1109/16.3365
关键词:
摘要: The quality of oxide thermally grown on polycrystalline silicon, commonly referred to as polyoxide, is strongly dependent polysilicon doping processes and polyoxide growth conditions. electrical properties polyoxides using different (in situ, ion implanted, POCl/sub 3/) oxidation (dry, wet, LPCVD) have been studied. emphasis the dependence polarity asymmetry leakage current, critical electric field histogram, electron trapping rate, charge breakdown. Polyoxides with in situ doped exhibit an unusual asymmetry, i.e. higher enhancement breakdown are observed when upper electrode biased negative. This opposite reported for before. High-temperature annealing films prior reduces this asymmetry. >
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