Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interface
作者： J.J. Chang , T.E. Hsieh , Y.L. Wang , W.T. Tseng , C.P. Liu
DOI: 10.1016/J.TSF.2004.06.165
关键词: Amorphous silicon 、 Optoelectronics 、 Chemical vapor deposition 、 Surface roughness 、 Silicon oxide 、 Polysilicon depletion effect 、 Materials science 、 Silicon 、 Nanocrystalline silicon 、 Polycrystalline silicon
摘要: A new modified low pressure chemical-vapor deposition process for stacked polysilicon (poly-Si) films is developed in this study. The proposed film combines with amorphous silicon films. In process, was deposited first at 630 8C, followed by a continuous temperature decrease down to 560 8C the of film. It found that doped result lowering surface roughness, together reduction (311) phase and (110) polysilicon. As consequence, device performance based on also improves. Results roughness analysis indicated has root-mean square (Rrms) 78 2, which smaller than those conventional (630 8C) (Rrms=97 2), (Rrms=123 8C). Transmission electron microscopic (TEM) observation performed oxide/polysilicon interface showed high angle grain boundaries side, may induce leakage current around interfacial area. D 2004 Elsevier B.V. All rights reserved.
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