Evolution of surface morphology during the growth of amorphous and polycrystalline silicon films

摘要: The evolution of the surface morphology LPCVD poly-Si films (deposition temperature 620°C), a-Si 550°C) and films, obtained by crystallization is investigated in thickness range 40–500 nm. It found that upon an increase from 40 to 500 nm, roughness (parameters S q , z v ) increased for poly-Si, while case a-Si, on contrary, decreases. correlation length (S al increases all three types silicon films. Poly-Si as compared have a significantly lower roughness, respectively, two times less at nm sixteen In contrast thick thin (at thicknesses than nm) granular structure, which especially pronounced average about 20 there maximum dependence thickness.