Structure and method for hard mask removal on an SOI substrate without using CMP process
作者： Oh-Jung Kwon
DOI:
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摘要: A hard mask material is removed from an SOI substrate without using a chemical mechanical polish (CMP) process. blocking deposited on after deep trench reactive ion etch (RIE) The top of the removed. selective wet etching process used to remove material. Trench recess depth effectively controlled.
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