A CCD imager overlaid with a thin-film photodetector of a heterojunction ZnSe-Zn 1-x Cd x Te
作者： T. Chikamura , Y. Miyata , K. Yano , Y. Ohta , S. Fujiwara
关键词:
摘要: A CCD imager which is composed of an interline transfer type scanner in the imaging area and a thin-film photodetector heterojunctjon ZnSe-Zn 1-x Cd x Te has been developed. The array consists 506^{V} \times 404^{H} picture elements. about 6.7^{V} 9.0^{H} mm2in size corresponds to that 2/3-in vidicon. For device achieve high performance, necessary conditions between parameters overlaid photoconductor have analyzed. Blooming phenomenon deeply related sensitivity. blooming suppressed without sacrificing sensitivity by applying pulse operation heterojunction. As result, excellent performances such as large suppression realized. scene illumination if F 1.4 100 1x (S/N ratio 46 dB for luminance signal) single-chip color camera. control capability 250 times saturation exposure.
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