Method for forming cavities in a semiconductor substrate by implanting atoms
作者： André-Jacques Auberton-Herve
DOI:
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摘要: The invention concerns a method for treating substrates, in particular semiconductors, by implanting atoms so as to produce substrate of cavities at controlled depth, characterised that it comprises steps which consists in: the first obtain concentration said depth; second different from first, atoms, lower than first; carrying out on treatment causing least part implanted depth migrate towards create preferably.
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