作者: Akishige Nakajima , 秋重 中島 , 英一 長谷 , 徹 藤岡 , Toru Fujioka
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摘要: PURPOSE: To reduce parasitic resistance by widening a cross-sectional area rag distributed constant line thicker than the width of formed in spiral shape which forms prescribed inductance used for drain voltage supply pre-FET. CONSTITUTION: Connection between electrode pre-FET 6 and pad 16 comprises & space 16μm provided inter-stage matching 25 25μm. The 11 is with 72μm that 21, length set at small value output impedance FET 10 shows 1Ω. Therefore, ratio observing power source from goes to around 100 even when 1.5mm nearly 1/5 11mm equivalent λ/4, negligibly reduces leakage an signal source. In this way, can be pushed same substrate only meandering.