Method of and device for sub-micron processing a surface

作者: Evert Jan Van Loenen

DOI:

关键词:

摘要: A method of and a device for sub-micron deforming surface (15) is described, example the purpose inscribing information. During scanning tip (14) tunneling microscrope held at constant distance from by means negative feedback control loop (18) which controlled current (It) between surface, forming pit (21) in (15). The deactivated height drive member (8) energized voltage (Vpz) whose amplitude increases as function time has predetermined final value, such that lowered into material.

参考文章(16)
James K. Gimzewski, Urs T. Duerig, Wolfgang D. Pohl, Direct access storage unit using tunneling current techniques ,(1987)
Mark J Zdeblick, Thomas R Albrecht, Integrated scanning tunneling microscope ,(1989)
U. Staufer, R. Wiesendanger, L. Eng, L. Rosenthaler, H.‐R. Hidber, H.‐J. Güntherodt, N. Garcia, Surface modification in the nanometer range by the scanning tunneling microscope Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 6, pp. 537- 539 ,(1988) , 10.1116/1.575377
J. K. Gimzewski, R. Möller, Transition from the tunneling regime to point contact studied using scanning tunneling microscopy Physical Review B. ,vol. 36, pp. 1284- 1287 ,(1987) , 10.1103/PHYSREVB.36.1284