Space-Charge Region Scattering in Indium Monoselenide

作者: PI Savitskii , ZD Kovalyuk , IV Mintyanskii , None

DOI: 10.1002/1521-396X(200008)180:2<523::AID-PSSA523>3.0.CO;2-X

关键词:

摘要: Scattering mechanisms in undoped n-type indium monoselenide have been studied the temperature range between 80 and 400 K. The experimental data were obtained from Hall photo-Hall effects. It is shown that samples with low room mobility (μ H = 600 to 750 cm 2 /Vs) dependence of μ (T) can be explained by electron scattering on charged impurity aggregates surrounded space-charge regions. Under illumination neutralization effective charge photo-excited carriers reason for predominant homopolar optical phonons A' 1g .

参考文章(20)
Boris I. Shklovskii, Alex L. Efros, Electronic properties of doped semiconductors ,(1984)
H. J. Queisser, D. E. Theodorou, Hall-Effect Analysis of Persistent Photocurrents in n-GaAs Layers Physical Review Letters. ,vol. 43, pp. 401- 404 ,(1979) , 10.1103/PHYSREVLETT.43.401
A. Segura, M. C. Mart�nez-Tom�s, B. Mar�, A. Casanovas, A. Chevy, Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence Applied Physics A. ,vol. 44, pp. 249- 260 ,(1987) , 10.1007/BF00616698
C. De Blasi, G. Micocci, A. Rizzo, A. Tepore, Electrical properties of indium selenide single crystals Physical Review B. ,vol. 27, pp. 2429- 2434 ,(1983) , 10.1103/PHYSREVB.27.2429
G. Micocci, M. Molendini, A. Tepore, R. Rella, P. Siciliano, Investigation of the electrical properties of Cd‐doped indium selenide Journal of Applied Physics. ,vol. 70, pp. 6847- 6853 ,(1991) , 10.1063/1.349807
G. B. Stringfellow, H. Künzel, Electron mobility in compensated GaAs and AlxGa1−xAs Journal of Applied Physics. ,vol. 51, pp. 3254- 3261 ,(1980) , 10.1063/1.328083
A. Segura, J. P. Guesdon, J. M. Besson, A. Chevy, Photoconductivity and photovoltaic effect in indium selenide Journal of Applied Physics. ,vol. 54, pp. 876- 888 ,(1983) , 10.1063/1.332050
S. Shigetomi, T. Ikari, Y. Koga, S. Shigetomi, Annealing behavior of electrical properties of n‐InSe single crystals Physica Status Solidi (a). ,vol. 86, ,(1984) , 10.1002/PSSA.2210860168