作者: PI Savitskii , ZD Kovalyuk , IV Mintyanskii , None
DOI: 10.1002/1521-396X(200008)180:2<523::AID-PSSA523>3.0.CO;2-X
关键词:
摘要: Scattering mechanisms in undoped n-type indium monoselenide have been studied the temperature range between 80 and 400 K. The experimental data were obtained from Hall photo-Hall effects. It is shown that samples with low room mobility (μ H = 600 to 750 cm 2 /Vs) dependence of μ (T) can be explained by electron scattering on charged impurity aggregates surrounded space-charge regions. Under illumination neutralization effective charge photo-excited carriers reason for predominant homopolar optical phonons A' 1g .