Investigation of the electrical properties of Cd‐doped indium selenide

摘要: Resistivity, Hall‐effect, and deep‐level transient spectroscopy measurements have been performed on Cd‐doped InSe single crystals grown by the Bridgman–Stockbarger method. The temperature dependence of hole mobility can be explained combining optical phonon ionized impurity scatterings. Two hole‐trapping levels detected at 0.42 0.48 eV above valence band with a capture cross section about 10−17 cm2. Finally, we found latter trap to deep acceptor level, which is very probably associated defects or defect complexes formed dopant atoms.