Microstructure modulation responsible for the improvement in thermoelectric property of a wide-gap AgIn5Se8 semiconductor
作者： J.L. Cui , Y.Y. Li , Y. Deng , Q.S. Meng , Y.L. Gao
DOI: 10.1016/J.INTERMET.2012.07.013
关键词:
摘要: Abstract Here we employed microstructure modulation (MM) to tailor the thermoelectric property of a wide-gap ternary AgIn5Se8 compound. The results reveal that MM was realized through proper heat treatments. A gradual change observed from twinning nanoparticle-dominated structure as annealing time increases 100 days at 180 °C. This also becomes more evident both lattice thermal conductivity and Seebeck coefficient increase. Neither nor achieves best performance. In contrast, what is particularly important hybrid involves submicro-patches -domains. compound with this structure, which obtained by being annealed for 60 days, maximum figure merit ZT 0.72 863 K. It not only higher factor 5 than unannealed, but it 1.3 days. These findings seem challenge well-known nanostructuring engineering aims improving performance via reduction in conductivity.
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