Oxygen adsorption on the GaAs(110) surface

摘要: The adsorption of nonexcited molecular oxygen on cleaved GaAs(110) surfaces at room temperature has been studied using photoemission techniques. Detailed analysis the oxygen‐induced structure in valence‐band region revealed two different forms adsorbed oxygen. Adsorption first form saturates a very low coverage (∠0.01 monolayer) and is probably associated with defect sites. second occurs normal surface sites produces measurable chemical shifts Ga‐3d As‐3d core levels. nature further investigated level studies oxidized subsequently heated to high temperature. Annealing moderately (∠370°C) causes transfer from As–O bonds additional Ga–O bonds. Fast heating (430°–450°C) leads desorption roughly half atoms all chemically affected As atoms, while little change ...