Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation
作者： Sihai Chen , Hong Ma , Xinjian Yi , Tao Xiong , Hongcheng Wang
DOI: 10.1016/J.SNA.2004.03.018
关键词:
摘要: Abstract This paper presents a method to make vanadium dioxide (VO 2 ) crystallites on silicon substrates by reactive ion beam sputtering. The thickness of the thin film is about 100 nm. transmittance semiconducting phase VO 54% and it reduced as low 3% in metal at wavelength 10.6 μm. And ratio these two states measured being 18:1. When destructive light intensity above 0.85 W/cm 10.6 μm, most could be reflected film, thus sensitive infrared detector protected from strong laser radiation.
elsevier.com
sci-hub.se 参考文章(12)
F. J. Morin, Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature Physical Review Letters. ,vol. 3, pp. 34- 36 ,(1959) , 10.1103/PHYSREVLETT.3.34
Yong-Hee Han, In-Hoon Choi, Ho-Kwan Kang, Jong-Yeon Park, Kun-Tae Kim, Hyun-Joon Shin, Sung Moon, Fabrication of vanadium oxide thin film with high-temperature coefficient of resistance using V2O5/V/V2O5 multi-layers for uncooled microbolometers Thin Solid Films. ,vol. 425, pp. 260- 264 ,(2003) , 10.1016/S0040-6090(02)01263-4
Yin Dachuan, Xu Niankan, Zhang Jingyu, Zheng Xiulin, Vanadium dioxide films with good electrical switching property Journal of Physics D. ,vol. 29, pp. 1051- 1057 ,(1996) , 10.1088/0022-3727/29/4/017
Carl M. Lampert, ELECTROCHROMIC MATERIALS AND DEVICES FOR ENERGY-EFFICIENT WINDOWS Solar Energy Materials. ,vol. 11, pp. 1- 27 ,(1984) , 10.1016/0165-1633(84)90024-8
H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh, D. H. Kim, Mid-infrared properties of a VO 2 film near the metal-insulator transition Physical Review B. ,vol. 54, pp. 4621- 4628 ,(1996) , 10.1103/PHYSREVB.54.4621
R.T.Rajendra Kumar, B. Karunagaran, D. Mangalaraj, Sa.K. Narayandass, P. Manoravi, M. Joseph, Vishnu Gopal, R.K. Madaria, J.P. Singh, Room temperature deposited vanadium oxide thin films for uncooled infrared detectors Materials Research Bulletin. ,vol. 38, pp. 1235- 1240 ,(2003) , 10.1016/S0025-5408(03)00118-1
Xingjian Yi, Changhong Chen, Luqin Liu, Yingrui Wang, Bifeng Xiong, Hongchen Wang, Sihai Chen, None, A new fabrication method for vanadium dioxide thin films deposited by ion beam sputtering Infrared Physics & Technology. ,vol. 44, pp. 137- 141 ,(2003) , 10.1016/S1350-4495(02)00187-1
Hongchen Wang, Xinjian Yi, Guang Huang, Jing Xiao, Xiongwei Li, Sihai Chen, None, IR microbolometer with self-supporting structure operating at room temperature Infrared Physics & Technology. ,vol. 45, pp. 53- 57 ,(2004) , 10.1016/S1350-4495(03)00178-6
Changhong Chen, Xinjian Yi, Xingrong Zhao, Bifeng Xiong, Characterizations of VO2-based uncooled microbolometer linear array Sensors and Actuators A-physical. ,vol. 90, pp. 212- 214 ,(2001) , 10.1016/S0924-4247(01)00495-2
Masaharu Fukuma, Sakae Zembutsu, Shintaro Miyazawa, Preparation of VO 2 thin film and its direct optical bit recording characteristics Applied Optics. ,vol. 22, pp. 265- 268 ,(1983) , 10.1364/AO.22.000265